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BTS409L1 infineon technologies ag 1 2003-oct-01 smart highside power switch features ? overload protection ? current limitation ? short circuit protection ? thermal shutdown ? overvoltage protection (including load dump) ? fast demagnetization of inductive loads ? reverse battery protection 1 ) ? undervoltage and overvoltage shutdown with auto-restart and hysteresis ? open drain diagnostic output ? open load detection in on-state ? cmos compatible input ? loss of ground and loss of v bb protection ? e lectro s tatic d ischarge ( esd ) protection application ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? all types of resistive, inductive and capacitve loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos ? technology. providing embedded protective functions. + v bb in st signal gnd esd profet ? out gnd logic voltag sensor voltag source charge level f temperatur sensor rectifier limit for unclampe ind. gate protectio curren limit 2 4 1 3 5 load gnd load v logic overvoltag protectio gnd r o open detectio short to 1 ) with external current limit (e.g. resistor r gnd =150 ? ) in gnd connection, resistor in series with st connection, reverse load current limited by connected load. product summary overvoltage protection v bb(az) 43 v operating voltage v bb(on) 5.0 ... 34 v on-state resistance r on 200 m ? load current (iso) i l(iso) 2.3 a current limitation i l(scr) 4a to-220ab/5 5 standard 1 5 straight leads 1 5 smd
BTS409L1 infineon technologies ag 2 2003-oct-01 pin symbol function 1 gnd - logic ground 2 in i input, activates the power switch in case of logical high signal 3 v bb + positive power supply voltage, the tab is shorted to this pin 4 st s diagnostic feedback, low on failure 5 out (load, l) o output to the load maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 3) v bb 43 v supply voltage for full short circuit protection t j start =-40 ...+150c v bb 34 v load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 ? , r l = 5.3 ? , t d = 200 ms, in= low or high v load dump 4 ) 60 v load current (short circuit current, see page 4) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 18 w inductive load switch-off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const. i l = 2.3 a, z l = 98 mh, 0 ? : e as 335 mj electrostatic dischar ge capability (esd) in: (human body model) all other pins: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993 v esd 1.0 2.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 6 i in i st 2.0 5.0 ma thermal characteristics parameter and conditions symbol values unit min typ max thermal resistanc e chip - case: junction - ambient (free air): r thjc r thja -- -- -- -- 7 75 k/w smd version, device on pcb 5) : 39 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 ? resistor in the gnd connection and a 15 k ? resistor in series with the status pin. a resistor for the protection of the input is integrated. 3) r i = internal resistance of the load dump test pulse generator 4) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air.
BTS409L1 infineon technologies ag 3 2003-oct-01 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 3 to 5) i l = 1.8 a t j =25 c: t j =150 c: r on -- 160 320 200 400 m ? nominal load current, iso norm (pin 3 to 5) v on = 0.5 v, t c = 85 c i l(iso) 1.8 2.3 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 7 i l(gndhigh) -- -- 10 ma turn-on time in to 90% v out : turn-off time in to 10% v out : r l = 12 ? , t j =-40...+150c t on t off 80 80 200 200 400 400 s slew rate on 10 to 30% v out , r l = 12 ? , t j =-40...+150c d v /dt on 0.1 -- 1 v/ s slew rate off 70 to 40% v out , r l = 12 ? , t j =-40...+150c -d v /dt off 0.1 -- 1 v/ s operating parameters operating voltage 6 ) t j =-40...+150c: v bb(on) 5.0 -- 34 v undervoltage shutdown t j =-40...+150c: v bb(under) 3.5 -- 5.0 v undervoltage restart t j =-40...+25c: t j =+150c: v bb(u rst) -- -- 5.0 7.0 v undervoltage restart of charge pump see diagram page 12 t j =-40...+150c: v bb(ucp) -- 5.6 7.0 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.2 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 34 -- 43 v overvoltage restart t j =-40...+150c: v bb(o rst) 33 -- -- v overvoltage hysteresis t j =-40...+150c: ? v bb(over) -- 0.5 -- v overvoltage protection 7 ) t j =-40...+150c: i bb =40 ma v bb(az) 42 47 -- v standby current (pin 3) v in =0 t j =-40...+25c : t j = 150c: i bb(off) -- -- 10 12 23 28 a leakage output current (included in i bb(off) ) v in =0 i l(off) -- -- 12 a operating current (pin 1) 8) , v in =5 v, t j =-40...+150c i gnd -- 1.8 3.5 ma 6) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out v bb - 2 v 7) see also v on(cl) in table of protection functions and circuit diagram page 7.
BTS409L1 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag 4 2003-oct-01 protection functions 9) initial peak short circuit current limit (pin 3 to 5) i l(scp) t j =-40c: t j =25c: t j =+150c: 5.5 4.5 3 9.5 7.5 5 13 11 7 a repetitive short circuit shutdown current limit i l(scr) t j = t jt (see timing diagrams, page 10) -- 4 -- a output clamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma: v on(cl) 41 47 53 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery (pin 3 to 1) 10 ) - v bb -- -- 32 v diagnostic characteristics open load detection current t j =-40 c : (on-condition) t j =25 ..150c: i l (ol) 10 10 -- -- 200 150 ma open load detection voltage 11 ) (off-condition) t j =-40..150c: v out(ol) 2 3 4v internal output pull down (pin 5 to 1), v out =5 v, t j =-40..150c r o 4 10 30 k ? 8 ) add i st , if i st > 0, add i in , if v in >5.5 v 9 ) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 10 ) requires 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 7). 11) external pull up resistor required for open load detection in off state.
BTS409L1 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag 5 2003-oct-01 input and status feedback 12 ) input resistance see circuit page 6 r i 2.5 3.5 6 k ? input turn-on threshold voltage t j =-40..+150c: v in(t+) 1.7 -- 3.5 v input turn-off threshold voltage t j =-40..+150c: v in(t-) 1.5 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v off state input current (pin 2), v in = 0.4 v, t j =-40..+150c i in(off) 1 -- 50 a on state input current (pin 2), v in = 3.5 v, t j =-40..+150c i in(on) 20 50 90 a delay time for status with open load after switch off (see timing diagrams, page 11 ), t j =-40..+150c t d(st ol4) 100 400 800 s status invalid after positive input slope (open load) t j =-40 ... +150c: t d(st) -- 250 600 s status output (open drain) zener limit voltage t j =-40...+150c, i st = +1.6 ma: st low voltage t j =-40...+25c, i st = +1.6 ma: t j = +150c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- -- 6.1 -- -- -- 0.4 0.6 v 12) if a ground resistor r gnd is used, add the voltage drop across this resistor.
BTS409L1 infineon technologies ag 6 2003-oct-01 truth table input- output status level level normal operation l h l h h h open load l h 13 ) h h (l 14 ) ) l short circuit to v bb l h h h l 15 ) h (l 16 ) ) overtem- perature l h l l h l under- voltage l h l l h h overvoltage l h l l h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 11...12) 13 ) power transistor off, high impedance 14 ) with external resistor between pin 3 and pin 5 15) an external short of output to v bb , in the off state, causes an internal current from output to ground. if r gnd is used, an offset voltage at the gnd and st pins will occur and the v st low signal may be errorious. 16 ) low resistance to v bb may be detected in on-state by the no-load-detection terms profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd input circuit (esd protection) in gnd i r esd-zd i i i esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v).
BTS409L1 infineon technologies ag 7 2003-oct-01 status output st gnd esd- zd +5v r st(on) esd-zener diode: 6.1 v typ., max 5 ma; r st(on) < 380 ? at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). inductive and overvoltage output clamp + v bb out gnd profet v z v on v on clamped to 47 v typ. overvolt. and reverse batt. protection + v bb in st st r in r gnd gnd r signal gnd logic profet v z2 i r v z1 v z1 = 6.2 v typ., v z2 = 47 v typ., r gnd = 150 ? , r st = 15 k ? , r i = 3.5 k ? typ. open-load detection on-state diagnostic condition: v on < r on * i l(ol) ; in high open load detection logic unit + v bb out on v on off-state diagnostic condition: v out > 3 v typ.; in low open load detection logic unit v out signal gnd r ext r o off gnd disconnect profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd any kind of load. in case of input=high is v out v in - v in(t+) . due to v gnd >0, no v st = low signal available.
BTS409L1 infineon technologies ag 8 2003-oct-01 gnd disconnect with gnd pull up profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with energized inductive load profet v in st out gnd bb v bb 1 2 4 3 5 high normal load current can be handled by the profet itself. v bb disconnect with charged external inductive load profet v in st out gnd bb 1 2 4 3 5 v bb high s d if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch-off energy dissipation profet v in st out gnd bb = e e e e as bb l r e load l r l { z l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 ? l [mh] 1 10 100 1000 10000 12345 i l [a]
BTS409L1 infineon technologies ag 9 2003-oct-01 transient thermal impedance chip case z thjc = f (t p )z thjc [k/w] 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 1e2 0 0.01 0.02 0.05 0.1 0.2 0.5 d= t p [s]
BTS409L1 infineon technologies ag 10 2003-oct-01 timing diagrams figure 1a: v bb turn on: in v out t v bb st open drain proper turn on under all conditions figure 2a: switching a lamp, in st out l t v i figure 2b: switching an inductive load in st l t v i *) out t d(st) i l(ol) *) if the time constant of load is too large, open-load-status may occur figure 3a: short circuit shut down by overtempertature, reset by cooling in st l t i l(scr) i i l(scp) heating up may require se veral milliseconds, depending on external conditions
BTS409L1 infineon technologies ag 11 2003-oct-01 figure 4a: overtemperature: reset if t j < t jt in st out j t v t figure 5a: open load: detection in on-state, turn on/off to open load in st out l t v i open t d(st) t d(st ol4) the status delay time t d(st ol4) allows to ditinguish between the failure modes "open load" and "overtemperature". figure 5b: open load: detection in on-state, open load occurs in on-state in st out l t v i open normal normal t d(st ol1) t d(st ol2) t d(st ol1) = 30 s typ., t d(st ol2) = 20 s typ figure 5c: open load: detection in on- and off-state (with r ext ), turn on/off to open load in st out l t v i open t d(st)
BTS409L1 infineon technologies ag 12 2003-oct-01 figure 6a: undervoltage: in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v figure 6b: undervoltage restart of charge pump bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state charge pump starts at v bb(ucp) =5.6 v typ. figure 7a: overvoltage: in v out t v bb st on(cl) v v bb(over) v bb(o rst)
BTS409L1 infineon technologies ag 13 2003-oct-01 package and ordering code all dimensions in mm standard to-220ab/5 ordering code BTS409L1 q67060-s6107-a2 to-220ab/5, option e3043 ordering code BTS409L1 e3043 q67060-s6107-a3 smd to-220ab/5, opt. e3062 ordering code BTS409L1 e3062a t&r: q67060-s6107-a4 changed since 04.96 date change dec zth specification added 1996 t d(st ol4) max reduced from 1500 to 800s esd capability increased e as maximum rating and diagram added 2000 company name
BTS409L1 infineon technologies ag 14 2003-oct-01 published by infineon technologies ag , st.-martin-strasse 53, d-81669 mnchen ? infineon technologies ag 2001 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-in fringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for info rmation on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life- support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support devic e or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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